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PMEG2010AEK,115

PMEG2010AEK,115 NXP USA Inc.

PMEG2010AEK.pdf
Виробник: NXP USA Inc.
Description: DIODE SCHOTTK 20V 1A SMT3 MPAK
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SMT3; MPAK
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис PMEG2010AEK,115 NXP USA Inc.

Description: DIODE SCHOTTK 20V 1A SMT3 MPAK, Current - Reverse Leakage @ Vr: 200 µA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 20 V, Part Status: Obsolete, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SMT3; MPAK, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 70pF @ 5V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).