PMEG2010AEK,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: DIODE SCHOTT 20V 1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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Технічний опис PMEG2010AEK,115 NXP USA Inc.
Description: DIODE SCHOTT 20V 1A SMT3 MPAK, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 70pF @ 5V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMT3; MPAK, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A, Current - Reverse Leakage @ Vr: 200 µA @ 20 V.