Технічний опис PMEG4010AESBZ NEXPERIA
Description: DIODE SCHOTTKY 40V 1A DSN1006-2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.1 ns, Technology: Schottky, Capacitance @ Vr, F: 22pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A, Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V.
Інші пропозиції PMEG4010AESBZ
Фото | Назва | Виробник | Інформація |
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PMEG4010AESBZ | Виробник : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.1 ns Technology: Schottky Capacitance @ Vr, F: 22pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V |
товару немає в наявності |
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PMEG4010AESBZ | Виробник : Nexperia |
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товару немає в наявності |