PMEG6010AESBC315 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE SCHOTTKY 60V 1A DSN10062
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
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Технічний опис PMEG6010AESBC315 NXP USA Inc.
Description: DIODE SCHOTTKY 60V 1A DSN10062, Packaging: Bulk, Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.4 ns, Technology: Schottky, Capacitance @ Vr, F: 20pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A, Current - Reverse Leakage @ Vr: 650 µA @ 60 V.