PMF250XNEAX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CHANNEL 30V 900MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
Qualification: AEC-Q101
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Технічний опис PMF250XNEAX Nexperia USA Inc.
Description: MOSFET N-CHANNEL 30V 900MA SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V, Power Dissipation (Max): 342mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V, Qualification: AEC-Q101.