Технічний опис PMGD175XNEAX NEXPERIA
Description: MOSFET 2N-CH 30V 0.9A 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V, Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSSOP.
Інші пропозиції PMGD175XNEAX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PMGD175XNEAX | Виробник : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 30V 0.9A 6TSSOPPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSSOP |
товар відсутній |