PMN23UN,165 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 6.3A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Power Dissipation (Max): 1.75W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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Технічний опис PMN23UN,165 NXP USA Inc.
Description: MOSFET N-CH 20V 6.3A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SC-74, Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ), Power Dissipation (Max): 1.75W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).