Технічний опис PMN23UN,165 NXP Semiconductors
Description: MOSFET N-CH 20V 6.3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.75W (Tc), Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ), Supplier Device Package: SC-74, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V.
Інші пропозиції PMN23UN,165
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
PMN23UN,165 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ) Supplier Device Package: SC-74 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V |
товару немає в наявності |