PMN34LN,135 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V
на замовлення 10173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2219+ | 9.29 грн |
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Технічний опис PMN34LN,135 NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V, Power Dissipation (Max): 1.75W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SC-74, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V.
Інші пропозиції PMN34LN,135
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PMN34LN,135 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 20V 5.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SC-74 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V |
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