PMR370XN,115

PMR370XN,115 NXP USA Inc.


PMR370XN.pdf
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 840MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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Технічний опис PMR370XN,115 NXP USA Inc.

Description: MOSFET N-CH 30V 840MA SC75, Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SC-75, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 530mW (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 840mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).