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PMR780SN,115

PMR780SN,115 NEXPERIA


12262272706566pmr780sn.pdfcidbrand_nxpdatafeed-web_third_party.pdfcidbrand_nxpd.pdf Виробник: NEXPERIA
Trans MOSFET N-CH 60V 0.55A 3-Pin SC-75 T/R
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Технічний опис PMR780SN,115 NEXPERIA

Description: MOSFET N-CH 60V 550MA SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V, Power Dissipation (Max): 530mW (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-75, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V.

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PMR780SN,115 PMR780SN,115 Виробник : NXP USA Inc. PMR780SN.pdf Description: MOSFET N-CH 60V 550MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
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