PMR780SN,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 550MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-75
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 530mW (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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Технічний опис PMR780SN,115 NXP USA Inc.
Description: MOSFET N-CH 60V 550MA SC75, Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SC-75, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 530mW (Tc), Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).