Технічний опис PMR780SN,115 NEXPERIA
Description: MOSFET N-CH 60V 550MA SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V, Power Dissipation (Max): 530mW (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-75, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V.
Інші пропозиції PMR780SN,115
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PMR780SN,115 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V Power Dissipation (Max): 530mW (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-75 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V |
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