PMV117EN,215 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 2.5A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 147 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис PMV117EN,215 NXP USA Inc.
Description: MOSFET N-CH 30V 2.5A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 147 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23 (TO-236AB), Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 830mW (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).