PMV28UNEAR Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 20V 4.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис PMV28UNEAR Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.7A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 510mW (Ta), 3.9W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції PMV28UNEAR
| Фото | Назва | Виробник | Інформація |
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PMV28UNEAR | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4.7A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V Power Dissipation (Max): 510mW (Ta), 3.9W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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PMV28UNEAR | Виробник : Nexperia |
MOSFETs SOT23 N-CH 20V 4.7A |
товару немає в наявності |
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PMV28UNEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.9A; Idm: 19A; ESD Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.9A Pulsed drain current: 19A Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 48mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |