Технічний опис PMV30UN,215 NEXPERIA
Description: MOSFET N-CH 20V 5.7A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.9W (Tc), Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ), Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V.
Інші пропозиції PMV30UN,215
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PMV30UN,215 | Виробник : NXP USA Inc. |
 Description: MOSFET N-CH 20V 5.7A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ) Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V |
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PMV30UN,215 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 20V 5.7A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ) Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V |
товар відсутній |