PMV56XN,215 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 3.76A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 650mV @ 1mA (Min)
Power Dissipation (Max): 1.92W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис PMV56XN,215 NXP USA Inc.
Description: MOSFET N-CH 20V 3.76A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB), Vgs(th) (Max) @ Id: 650mV @ 1mA (Min), Power Dissipation (Max): 1.92W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).