PMWD19UN,518 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 5.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 700mV @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис PMWD19UN,518 NXP USA Inc.
Description: MOSFET 2N-CH 30V 5.6A 8TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 700mV @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V, Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).