PMZB170VNEYL Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PMZB170VNE/SOT883B/XQFN3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 340mW (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 820mV @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 66.4 pF @ 6 V
Description: PMZB170VNE/SOT883B/XQFN3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 340mW (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 820mV @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 66.4 pF @ 6 V
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Технічний опис PMZB170VNEYL Nexperia USA Inc.
Description: PMZB170VNE/SOT883B/XQFN3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 340mW (Ta), 3.5W (Tc), Vgs(th) (Max) @ Id: 820mV @ 250µA, Supplier Device Package: SOT-883, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 66.4 pF @ 6 V.