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PR2006G-T

PR2006G-T Diodes Incorporated

PR2001-2007G.pdf
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 800V 2A DO15
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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Технічний опис PR2006G-T Diodes Incorporated

Description: DIODE GEN PURP 800V 2A DO15, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-15, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 35pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AC, DO-15, Axial, Packaging: Tape & Reel (TR).