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PSI 50/12

PSI 50/12 POWERSEM

PSI50-12-DTE.pdf
Виробник: POWERSEM
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 33A
Type of semiconductor module: IGBT
Power dissipation: 208W
Mechanical mounting: screw
Pulsed collector current: 50A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Semiconductor structure: transistor/transistor
Case: ECO-PAC 2
Gate-emitter voltage: ±20V
Collector current: 33A
Topology: IGBT half-bridge
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Технічний опис PSI 50/12 POWERSEM

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 33A, Type of semiconductor module: IGBT, Power dissipation: 208W, Mechanical mounting: screw, Pulsed collector current: 50A, Application: motors, Max. off-state voltage: 1.2kV, Electrical mounting: THT, Semiconductor structure: transistor/transistor, Case: ECO-PAC 2, Gate-emitter voltage: ±20V, Collector current: 33A, Topology: IGBT half-bridge.