PSMN004-60P,127 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 75A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Технічний опис PSMN004-60P,127 NXP USA Inc.
Description: MOSFET N-CH 60V 75A TO220AB, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).