PSMN011-30YL,115

PSMN011-30YL,115 NXP Semiconductors


3531psmn011-30yl.pdf Виробник: NXP Semiconductors
Trans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R
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Технічний опис PSMN011-30YL,115 NXP Semiconductors

Description: MOSFET N-CH 30V 51A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tj), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V, Power Dissipation (Max): 49W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 15 V.

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PSMN011-30YL,115 PSMN011-30YL,115 Виробник : NXP USA Inc. Description: MOSFET N-CH 30V 51A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 15 V
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