PSMN011-30YL,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 51A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Технічний опис PSMN011-30YL,115 NXP USA Inc.
Description: MOSFET N-CH 30V 51A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 49W (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).