Технічний опис PSMN3R5-30LL,115 NXP Semiconductors
Description: MOSFET N-CH 30V 40A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: 8-DFN3333 (3.3x3.3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2061 pF @ 15 V.
Інші пропозиції PSMN3R5-30LL,115
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PSMN3R5-30LL,115 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 30V 40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: 8-DFN3333 (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2061 pF @ 15 V |
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