PSMN7R0-40LS,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 40A 8DFN
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1286 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Технічний опис PSMN7R0-40LS,115 NXP USA Inc.
Description: MOSFET N-CH 40V 40A 8DFN, Supplier Device Package: 8-DFN3333 (3.3x3.3), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1286 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.