PSSI 25/12 POWERSEM


pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC6638B22444FA8&compId=PSxx25-12-DTE.pdf?ci_sign=2c6f8fbadb575c53732e4e97af644ab883e52967 Виробник: POWERSEM
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; THT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: ECO-PAC 2
Application: Inverter
Electrical mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 130W
Mechanical mounting: screw
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Технічний опис PSSI 25/12 POWERSEM

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; THT, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper, Max. off-state voltage: 1.2kV, Collector current: 21A, Case: ECO-PAC 2, Application: Inverter, Electrical mounting: THT, Gate-emitter voltage: ±20V, Pulsed collector current: 35A, Power dissipation: 130W, Mechanical mounting: screw.