QS1700SCM8 Quest Semi
Виробник: Quest SemiDescription: 1700v 8AMP SiC Mosfet
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 20V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 142 pF @ 1000 V
на замовлення 2496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 212.51 грн |
| 10+ | 201.07 грн |
| 50+ | 170.38 грн |
| 100+ | 134.31 грн |
| 1000+ | 115.12 грн |
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Технічний опис QS1700SCM8 Quest Semi
Description: 1700v 8AMP SiC Mosfet, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 20V, Power Dissipation (Max): 88W, Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 142 pF @ 1000 V.