QS65SCM65D2P Quest Semi
Виробник: Quest SemiDescription: 650v 65amp SiC Mosfet D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 20V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1946 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 754.75 грн |
| 10+ | 674.86 грн |
| 250+ | 656.40 грн |
| 500+ | 577.30 грн |
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Технічний опис QS65SCM65D2P Quest Semi
Description: 650v 65amp SiC Mosfet D2PAK, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 20V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: D2PAK-7L, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1946 pF @ 400 V.