QSD12HCS65U Quest Semi
Виробник: Quest Semi
Description: DIODE SIC 650V 12A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
| Кількість | Ціна |
|---|---|
| 1+ | 371.02 грн |
| 10+ | 186.64 грн |
| 100+ | 170.01 грн |
| 500+ | 133.37 грн |
| 1000+ | 125.27 грн |
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Технічний опис QSD12HCS65U Quest Semi
Description: DIODE SIC 650V 12A TO247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Supplier Device Package: TO-247-3L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.