QSD25HCS170U Quest Semi
Виробник: Quest Semi
Description: DIODE SIL CARB 1700V 94A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2822pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
Description: DIODE SIL CARB 1700V 94A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2822pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 623.57 грн |
| 100+ | 474.79 грн |
| 500+ | 450.88 грн |
| 1000+ | 422.49 грн |
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Технічний опис QSD25HCS170U Quest Semi
Description: DIODE SIL CARB 1700V 94A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2822pF @ 0V, 1MHz, Current - Average Rectified (Io): 25A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A, Current - Reverse Leakage @ Vr: 10 µA @ 1700 V.