QSD50HCS120U Quest Semi
Виробник: Quest Semi
Description: Homogeneous SiC Schottky Diode 1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Qualification: AEC-Q101
Description: Homogeneous SiC Schottky Diode 1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 247.93 грн |
| 250+ | 113.13 грн |
| 500+ | 92.00 грн |
| 1000+ | 80.59 грн |
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Технічний опис QSD50HCS120U Quest Semi
Description: Homogeneous SiC Schottky Diode 1, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz, Current - Average Rectified (Io): 50A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V, Qualification: AEC-Q101.