Продукція > RENESAS ELECTRONICS CORPORATION > R1EV5801MBSDRDI#B0

R1EV5801MBSDRDI#B0 Renesas Electronics Corporation

R1EV5801MB_Series_Rev2.00_5-12-16.pdf Виробник: Renesas Electronics Corporation
Description: IC EEPROM 1MBIT PARALLEL 32SOP
Packaging: Tray
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-SOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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Технічний опис R1EV5801MBSDRDI#B0 Renesas Electronics Corporation

Description: IC EEPROM 1MBIT PARALLEL 32SOP, Packaging: Tray, Package / Case: 32-SOIC (0.445", 11.30mm Width), Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: EEPROM, Memory Format: EEPROM, Supplier Device Package: 32-SOP, Write Cycle Time - Word, Page: 10ms, Memory Interface: Parallel, Access Time: 150 ns, Memory Organization: 128K x 8, DigiKey Programmable: Not Verified.