R306120F Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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Технічний опис R306120F Microchip Technology
Description: DIODE GEN PURP 1.2KV 70A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 70A, Supplier Device Package: DO-5 (DO-203AB), Operating Temperature - Junction: -65°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.