R6020ANZFL1C8 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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Технічний опис R6020ANZFL1C8 Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 4.15V @ 1mA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.