Продукція > ROHM SEMICONDUCTOR > RB160A30T-32
RB160A30T-32

RB160A30T-32 Rohm Semiconductor

RB160A30.pdf
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A MSR
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: MSR
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-41 Mini, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис RB160A30T-32 Rohm Semiconductor

Description: DIODE SCHOTTKY 30V 1A MSR, Current - Reverse Leakage @ Vr: 50 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: MSR, Current - Average Rectified (Io): 1A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-41 Mini, Axial, Packaging: Tape & Box (TB).