RBN50H65T1FPQ-A0#CB0 Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
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Технічний опис RBN50H65T1FPQ-A0#CB0 Renesas Electronics Corporation
Description: IGBT TRENCH 650V 100A TO-247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/93ns, Switching Energy: 830µJ (on), 670µJ (off), Test Condition: 400V, 50A, 16Ohm, 15V, Gate Charge: 36 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W.
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| Фото | Назва | Виробник | Інформація |
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Ціна |
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RBN50H65T1FPQ-A0#CB0 | Виробник : Renesas Electronics |
IGBTs IGBT- G8H 650V/50A built-in FRD TO247A |
товару немає в наявності |