RFD3N08LSM9A Harris Corporation

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: TO-252-3 (DPAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 5V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.