RFH30N15 Harris Corporation

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-218-3 Isolated Tab, TO-218AC, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-218 Isolated, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.