RGP02-20E-BULK EIC SEMICONDUCTOR INC.
Виробник: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 2KV 500MA DO41
Technology: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bag
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Технічний опис RGP02-20E-BULK EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 2KV 500MA DO41, Technology: Standard, Current - Reverse Leakage @ Vr: 5 µA @ 2000 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 2000 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-41, Current - Average Rectified (Io): 500mA, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Reverse Recovery Time (trr): 300 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Bag.