Технічний опис RGP02-20EHE3/54 Vishay
Description: DIODE GEN PURP 2KV 500MA DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 2000 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA, Current - Reverse Leakage @ Vr: 5 µA @ 2000 V.
Інші пропозиції RGP02-20EHE3/54
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RGP02-20EHE3/54 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 2KV 500MA DO204ALPackaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V |
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RGP02-20EHE3/54 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V |
товар відсутній |