RGWSX2TS65DGC13 Rohm Semiconductor

Description: IGBT TRENCH FS 650V 104A TO247G, Power - Max: 288 W, Current - Collector Pulsed (Icm): 180 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 104 A, Gate Charge: 140 nC, Test Condition: 400V, 60A, 10Ohm, 15V, Switching Energy: 1.43mJ (on), 1.2mJ (off), Td (on/off) @ 25°C: 55ns/180ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247G, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Reverse Recovery Time (trr): 88 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.