RJJ0315DPA-00#J5A Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET P-CH 30V 35A
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 271+ | 72.72 грн |
Відгуки про товар
Написати відгук
Технічний опис RJJ0315DPA-00#J5A Renesas Electronics Corporation
Description: MOSFET P-CH 30V 35A, Packaging: Bulk, Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 17.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V.