RJK0216DPA-00#J53 Renesas Electronics America Inc

Description: POWER FIELD-EFFECT TRANSISTOR, Part Status: Active, Supplier Device Package: 8-DFN (5x6), FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 15A, 32A, Drain to Source Voltage (Vdss): 25V, Power - Max: 10W, 20W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-WFDFN, Packaging: Bulk.