RJK0353DPA-WS#J0B Renesas Electronics America Inc

Description: MOSFET N-CH 30V 35A WPAK, Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: WPAK(3F) (5x6), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 40W (Ta), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Bulk.