RJK03B7DPA-00#J5A Renesas Electronics America Inc
Виробник: Renesas Electronics America IncDescription: MOSFET N-CH 30V 30A 8WPAK
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
на замовлення 197615 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 541+ | 43.66 грн |
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Технічний опис RJK03B7DPA-00#J5A Renesas Electronics America Inc
Description: MOSFET N-CH 30V 30A 8WPAK, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: 8-WPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V.