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RJK03B9DPA-00#J5A

RJK03B9DPA-00#J5A Renesas Electronics Corporation

RNCCS18260-1.pdf?t.download=true&u=5oefqw
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A 8WPAK
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-WPAK
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
541+41.14 грн
Мінімальне замовлення: 541 шт
В кошику  од. на суму  грн.
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Технічний опис RJK03B9DPA-00#J5A Renesas Electronics Corporation

Description: MOSFET N-CH 30V 30A 8WPAK, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-WPAK, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).