RJK03C0DPA-00#J53 Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 70A 8WPAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-WPAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 163+ | 144.73 грн |
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Технічний опис RJK03C0DPA-00#J53 Renesas Electronics America Inc
Description: MOSFET N-CH 30V 70A 8WPAK, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-WPAK, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Bulk.