RJK03N6DPA-00#J5A Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 40A 8WPAK
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-WPAK
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 396+ | 59.46 грн |
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Технічний опис RJK03N6DPA-00#J5A Renesas Electronics America Inc
Description: MOSFET N-CH 30V 40A 8WPAK, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-WPAK, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-WFDFN Exposed Pad, Packaging: Bulk.