RJK03P9DPA-00#J5A Renesas Electronics America Inc

Description: POWER, N-CHANNEL MOSFET, Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-WFDFN Exposed Pad, Packaging: Bulk, Supplier Device Package: 8-WPAK, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 20A, 50A, Drain to Source Voltage (Vdss): 30V, Power - Max: 15W, 35W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).