RJK0701DPN-E0#T2 Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 75V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Supplier Device Package: TO-220AB
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 78+ | 285.08 грн |
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Технічний опис RJK0701DPN-E0#T2 Renesas Electronics America Inc
Description: MOSFET N-CH 75V 100A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Supplier Device Package: TO-220AB, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.