RJK1001DPN-E0#T2 Renesas Electronics Corporation

Description: MOSFET N-CH 100V 80A TO220AB, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Power Dissipation (Max): 200W (Tc).