RJK6011DP3-A0#J2 Renesas
Виробник: Renesas
Description: RJK6011DP3-A0#J2 - SILICON NCH S
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Description: RJK6011DP3-A0#J2 - SILICON NCH S
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 278+ | 82.26 грн |
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Технічний опис RJK6011DP3-A0#J2 Renesas
Description: RJK6011DP3-A0#J2 - SILICON NCH S, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V.