RJL6013DPE-00#J3 Renesas Electronics America Inc

Description: MOSFET N-CH 600V 11A 4LDPAK, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LDPAK, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 810mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-83, Packaging: Tape & Reel (TR).