RJM0306JSP-01#J0 Renesas Electronics Corporation

Description: MOSFET 2N/2P-CH 30V 3.5A 8SOP, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Supplier Device Package: 8-SOP.